In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a metallic liner, acting as a parallel resistance, is presented. To assess the effect of this solution, we compare the results with a standard OxRRAM cell structure. A very good stability of the resistive states, both in endurance and temperature, is highlighted and explained thanks to a conductive fila-ment based model.
@article{arxiv.2010.12210,
title = {Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner},
author = {N. Guillaume and M. Azzaz and S. Blonkowski and E. Jalaguier and P. Gonon and C. Vallée and T. Blomberg and M. Tuominen and H. Sprey and S. Bernasconi and C. Charpin-Nicolle and E. Nowak},
journal= {arXiv preprint arXiv:2010.12210},
year = {2020}
}
Comments
This paper is an accepted abstract to the conference SSDM that was held in Japan in september 2019