Related papers: Site-controlled InGaN/GaN single-photon-emitting d…
Local control of the generation and interaction of indistinguishable single photons is a key requirement for photonic quantum networks. Waveguide-based architectures, in which embedded quantum emitters act as both highly coherent single…
InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable and user-friendly…
A high-quality quantum dot (QD) single-photon source is a key resource for quantum information processing. Exciting a QD emitter resonantly can greatly suppress decoherence processes and lead to highly indistinguishable single-photon…
For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based…
A fundamental component of an integrated quantum optical circuit is an on-chip beam-splitter operating at the single-photon level. Here we demonstrate the monolithic integration of an on-demand quantum emitter in the form of a single…
The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods…
Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current…
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…
An on-demand single photon source is a key element in a series of prospective quantum technologies and applications. We demonstrate the operation of a tuneable on-demand microwave photon source based on a fully controllable superconducting…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
Scalable quantum photonic technologies require low-loss integration of many identical single-photon sources with photonic circuitry on a chip. Relatively complex quantum photonic circuits have already been demonstrated; however, sources…
The integration of entangled photon emitters in nanophotonic structures designed for the broadband enhancement of photon extraction is a major challenge for quantum information technologies. We study the potential of quantum dot (QD)…
Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources.…
The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
In this work we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite…