Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources. However, very little is known about how to control, dynamically tune and switch their single-photon electroluminescence (SPEL), which is required for efficient generation of single photons on demand. Here, we propose and theoretically demonstrate a concept of a gate-tunable single-photon emitting diode, which allows not only to dynamically tune the SPEL rate in the range from 0.6 to 40 Mcps but also to switch it on and off in only 0.2 ns.
@article{arxiv.1905.04790,
title = {Gate-tunable single-photon electroluminescence of color centers in silicon carbide},
author = {Igor A. Khramtsov and Dmitry Yu. Fedyanin},
journal= {arXiv preprint arXiv:1905.04790},
year = {2019}
}