Related papers: Site-controlled InGaN/GaN single-photon-emitting d…
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced…
Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…
We present a photonic structure where Mie, Tamm, and surface plasmon optical modes can be tailored to enhance the brightness of an embedded single-photon emitter. Contrary to most proposals, the structure is designed for excitation and…
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count…
The scalability of quantum dot based non-classical light sources relies on the control over their dissimilar emission energies. Electric fields offer a promising route to tune the quantum dot emission energy through the quantum-confined…
We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under…
In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting…
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p…
Spectrally-tunable quantum-light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon-extraction efficiency of {\eta}=(20 +- 2) % and a tuning…
We report the observation of all-optically tunable Raman fluorescence from a single quantum dot. The Raman photons are produced in an optically-driven Lambda-system defined by subjecting the single electron charged quantum dot to a magnetic…
Scalable quantum photonic architectures demand highly efficient, high-purity single-photon sources, which can be frequency matched via external tuning. We demonstrate a single-photon source based on an InAs quantum dot embedded in a…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth…
We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and…
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…
Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light…
We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model…