Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
@article{arxiv.1802.08758,
title = {Frequency control of single quantum emitters in integrated photonic circuits},
author = {Emma R. Schmidgall and Srivatsa Chakravarthi and Michael Gould and Ian R. Christen and Karine Hestroffer and Fariba Hatami and Kai-Mei C. Fu},
journal= {arXiv preprint arXiv:1802.08758},
year = {2018}
}