English

All-optical single-electron read-out devices based on GaN quantum dots

Strongly Correlated Electrons 2009-11-07 v1 Materials Science

Abstract

We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model which allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to ``exact'' results. We apply our study to the design of an all-optical read-out device which exploits long-range dipole-monopole interactions and may be also used to monitor the charge status of a quantum dot system.

Keywords

Cite

@article{arxiv.cond-mat/0211476,
  title  = {All-optical single-electron read-out devices based on GaN quantum dots},
  author = {Irene D'Amico and Fausto Rossi},
  journal= {arXiv preprint arXiv:cond-mat/0211476},
  year   = {2009}
}

Comments

accepted for publication on Appl. Phys. Lett

R2 v1 2026-07-22T10:43:41.069Z