Related papers: Spin Chains and Electron Transfer at Stepped Silic…
Spin polarization effects in nonmagnetic materials are generally believed as an outcome of spin-orbit coupling provided that the global inversion symmetry is lacking, also known as 'spin-momentum locking'. The recently discovered hidden…
A simple expression for the conductance steps in the inelastic electron tunneling from spin excitations in a single magnetic atom adsorbed on a non-magnetic metal surfaces is derived. The inelastic coupling between the tunneling electron…
We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique.…
We demonstrate that spin chains are experimentally feasible using electrons confined in micro-Penning traps, supplemented with local magnetic field gradients. The resulting Heisenberg-like system is characterized by coupling strengths…
The existence of spin-currents in absence of any driving external fields is commonly considered an exotic phenomenon appearing only in quantum materials, such as topological insulators. We demonstrate instead that equilibrium spin currents…
We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where…
An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces but the nature of its low temperature phases has been puzzled for last two decades. Here, we unambiguously identify the low…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
We present a detailed analysis of the spin-flip excitations induced by a periodic time-dependent electric field in the Rashba prototype Au(111) noble metal surface. Our calculations incorporate the full spinor structure of the…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
Although spin and charge stripes in high-Tc cuprates have been extensively studied, the exact range of carrier concentration over which they form a static order remains uncertain, complicating efforts to understand their significance. In…
We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…
We study the magnetic properties of the adatom systems on a semiconductor surface Si(111):\{C,Si,Sn,Pb\} - ($\sqrt{3} \times \sqrt{3}$). On the basis of all-electron density functional theory calculations we construct effective low-energy…
We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric…
Recent photoemission experiments on the Si(553)-Au reconstruction show a one-dimensional band with a peculiar ~1/4 filling. This band could provide an opportunity for observing large spin-charge separation if electron-electron interactions…
At each of the boundaries of the two-dimensional (2D) rectangular conductor parallel to the electric current there arises a stripe with an electric field transverse to the current and a 100% electron spin polarization. The two stripes have…
Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
Using spin density functional theory we study the electronic and magnetic properties of atomically thin, suspended chains containing silver and oxygen atoms in an alternating sequence. Chains longer than 4 atoms develop a half-metallic…