Related papers: Resonance-enhanced waveguide-coupled silicon-germa…
High bandwidth and low dark current germanium (Ge) photodetectors are crucial in silicon photonic integrated circuits. The bandwidth of Ge photodetectors is restricted by carrier transit time and parasitic parameters. And thermal generation…
Integration of superconducting nanowire single photon detectors and quantum sources with photonic waveguides is crucial for realizing advanced quantum integrated circuits. However, scalability is hindered by stringent requirements on high…
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent…
Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters at low temperatures, the colour centres must be integrated…
We fabricated and characterised nanowire superconducting single-photon detectors (SSPDs) made of 4 nm thick amorphous Mo$_x$Si$_{1-x}$ films. At 1.7 K the best devices exhibit a detection efficiency up to 18% at 1.2 um wavelength of…
We present proof-of-operation for a new method of electron thermometry using microwave impedance of a hafnium micro-absorber. The new method leads to an ultimate THz-range detector suitable for microwave readout and frequency division…
In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency…
Compact optical detectors with fast binary photoswitching over a broad range of wavelength are essential as an interconnect for any light-based parallel, real-time computing. Despite of the tremendous technological advancements yet there is…
High refractive index contrast optical microdisk resonators fabricated from silicon-on-insulator wafers are studied using an external silica fiber taper waveguide as a wafer-scale optical probe. Measurements performed in the 1500 nm…
Quantum photonic integration circuits are a promising approach to scalable quantum processing with photons. Waveguide single-photon-detectors (WSPDs) based on superconducting nanowires have been recently shown to be compatible with…
We present a compact current sensor based on a superconducting microwave lumped-element resonator with a nanowire kinetic inductor, operating at 4.2 K. The sensor is suitable for multiplexed readout in GHz range of large-format arrays of…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…
We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 ${\mu}m$, and active areas up to 400 by…
We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous WSi and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
Development of high-speed, spatial-mapping spectrometers in the millimeter and far-infrared frequencies would enable entirely new research avenues in astronomy and cosmology. An "on-chip" spectrometer is one such technology that could…
The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical…