Related papers: Resonance-enhanced waveguide-coupled silicon-germa…
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn…
We present the design and characterisation of a low-noise, resonant input transimpedance amplified photodetector. The device operates at a resonance frequency of $90 \,\textrm{MHz}$ and exhibits an input referred current noise of…
The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has…
Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the…
Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon…
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically…
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate…
Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resonant nanodisks is experimentally studied. Photoluminescence…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address…
We present an alternative approach to the fabrication of highly efficient superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide. Using well-established technologies for the deposition of dielectric mirrors and…
Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…
In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction…
Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for…
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…
Photodetectors are typically based on photocurrent generation from electron-hole pairs in semiconductor structures and on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic…
A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the…
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide,…