Related papers: Resonance-enhanced waveguide-coupled silicon-germa…
A stepped-impedance low-pass filter with integrated hollow waveguide absorbers is presented. The filter combines low insertion loss in the passband with strong attenuation at high frequencies, making it well suited for superconducting…
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
Field enhancement of two-photon absorption from a 50-fs pulse on a silicon ridge waveguide is simulated for a varying energy downward propagating 800+/-9.42 nm wavelength plane-wave orthonormal to a waveguide in 2D FDTD using ANSYS…
While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
We have constructed a microwave detector based on the voltage switching of an underdamped Josephson junction, that is positioned at a current antinode of a {\lambda}/4 coplanar waveguide resonator. By measuring the switching current and the…
Future wireless communication system embraces physical-layer signal detection with high sensitivity, especially in the microwave photon level. Currently, the receiver primarily adopts the signal detection based on semi-conductor devices for…
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by…
We achieve high detectivity terahertz sensing using a silicon nitride nanomechanical resonator functionalized with a metasurface absorber. High performances are achieved by striking a fine balance between the frequency stability of the…
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of…
Fabrication processes involving anhydrous hydrofluoric vapor etching are developed to create high-$Q$ aluminum superconducting microwave resonators on free-standing silicon membranes formed from a silicon-on-insulator wafer. Using this…
Supercontinuum generation is an extensively studied and arguably the most important and all-encompassing nonlinear phenomenon. Yet, we do not have a good control over all the signals generated in this process. Usually a large part of an…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
A double-layer silicon detector consisting of two 500micron-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1-30 keV with an effective…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…
A mid-infrared single photon detector (MIR-SNSPD) was reported based on 30 nm-wide superconductor molybdenum silicide nanowires in this work. Saturated quantum efficiencies (QEs) were achieved at the wavelength ranging from 1.55 to 5.07…
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy…