Related papers: Fractional Quantum Hall States in a Ge Quantum Wel…
We compare quantum Hall systems at filling factor 2 to those at filling factors 2/3 and 2/5, corresponding to the exact filling of two lowest electron or composite fermion (CF) Landau levels. The two fractional states are examples of CF…
We present a model of dissipative transport in the fractional quantum Hall regime. Our model takes account of tunneling through saddle points in the effective potential for excitations created by impurities. We predict the temperature range…
Effect of interlayer tunneling in the double-layer fractional quantum Hall system at the total Landau level filling of $\nu=1/m$ ($m$: odd integer) is analyzed with the composite-fermion approach in which the flux attachment is directly…
In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near…
The fractional quantum Hall states are non-Fermi liquids of electrons, in that their ground states and low energy excitations are described not in terms of electrons but in terms of composite fermions which are bound states of electrons and…
We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs)…
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…
Almost all quantum Hall effect to date can be understood as {\em integral} quantum Hall effect of appropriate particles, namely electrons or composite fermions. This paper investigates theoretically the feasibility of nested states of…
Using acoustic method we study dependences of transverse AC conductance, $\sigma (\omega)$, on magnetic field, temperature and the amplitude of AC electric field in a wide (75 nm) quantum well (QW) structure focusing on the vicinity of the…
We consider a number of strongly-correlated quantum Hall states which are likely to be realized in bilayer quantum Hall systems at total Landau level filling fraction ${\nu_T}=1$. One state, the $(3,3,-1)$ state, can occur as an instability…
We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at…
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
Motivated by two independent experiments revealing a resistance minimum at the Landau level (LL) filling factor $\nu=2+4/9$, characteristic of the fractional quantum Hall effect (FQHE) and suggesting electron condensation into a yet unknown…
The Hall-resistance curve of a two-dimensional electron system in the presence of a strong perpendicular magnetic field is an example of self-similarity. It reveals plateaus at low temperatures and has a fractal structure. We show that this…
In this paper we study fractional quantum Hall composite fermion wavefunctions at filling fractions \nu = 2/3, 3/5, and 4/7. At each of these filling fractions, there are several possible wavefunctions with different spin polarizations,…
We study fermions and hardcore bosons with long range dipolar interactions at fractional fillings in a topological checkerboard lattice with short-range hoppings up to next-next-nearest neighbors \cite{Neupert2011}. We consider the case…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
We report the observation of a fully developed fractional quantum Hall state at $\nu=5/2$ in GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells with mobility well below $10^{7}$\thinspace cm$^{2}$/Vs. This is achieved either by strong illumination or…
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a…