Related papers: Piezo Voltage Controlled Planar Hall Effect Device…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
Piezoelectric PZT solid solutions were studied as a function of pressure and temperature. Moderate pressure is found to induce phase transitions to monoclinic phases (Cm,Cc) for Ti-rich PZT, which are the same ferroelectric phases…
We report the eigen-frequency shift induced by an applied voltage on quartz material. The samples are in the form of commercial 32 KHz quartz tuning forks used in watches. Three vibration modes are studied: one prong oscillates, two prongs…
Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the…
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…
Nonlinear Hall effects have been previously investigated in non-centrosymmetric systems for electronic systems. However, they only exist in metallic systems and are not compatible with ferroelectrics since these latter are insulators, hence…
We have explored the electric field controlled magnetization in the nanodot CoFe2O4/SrRuO3/PMN-PT heterostructures. Ordered ferromagnetic CFO nanodots (~300 nm lateral dimension) are developed on the PMN-PT substrate (ferroelectric as well…
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…
To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose…
Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied…
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large…
Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An…
Taking advantage of the anomalous Hall effect, we electrically probe low-frequency magnetization fluctuations at room temperature in a thin ferromagnetic Pt/Co/AlO$_x$ layer stack with perpendicular magnetic anisotropy. We observe a strong…
Ferromagnetic-ferroelectric composites have attracted interests in recent years for use as magnetic field sensors. The sensing is based on magneto-electric (ME) coupling between the electric and magnetic subsystems and is mediated by…
An anomalous Hall effect and rectification of a Hall voltage are observed by applying a radio-frequency (rf) current through a single-layered ferromagnetic wire located on a coplanar waveguide. The components of the magnetization…
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…
We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field…
Taking advantage of the Magnetoelectric (ME) and its inverse effect, this article demonstrates strain-mediated magnetoelectric write and read operations simultaneously in Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures without using…
Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale…