Related papers: Piezo Voltage Controlled Planar Hall Effect Device…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
Two-dimensional (2D) van der Waals (vdW) ferromagnets have emerged as a critical class of quantum materials for next-generation, low-dimensional spintronic devices. In this study, we report a comprehensive study of the transport properties…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW…
We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the…
The ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junction exhibits thermal and electrical quantum Hall effects. The generated Hall voltage and transverse temperature gradient can be controlled by the directions of magnetizations…
We report the magnetoresistance and nonlinear Hall effect studies over a wide temperature range in pulsed laser deposited Ni0.07Zn0.93O thin film. Negative and positive contributions to magnetoresistance at high and low temperatures have…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Mutual control of the electricity and magnetism in terms of magnetic (H) and electric (E) fields, the magnetoelectric (ME) effect, offers versatile low power-consumption alternatives to current data storage, logic gate, and spintronic…
Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferroics in the monolayer limit are rare. Here, we demonstrate…
Quantum materials have exhibited attractive electro-mechanical responses, but their piezoelectric coefficients are far from satisfactory due to the lack of fundamental mechanisms to benefit from the quantum effects. We discovered the valley…
THz polarization control upon generation is a crucially missing functionality. THz spintronic emitters based on the inverse spin Hall effect allow for this by the strict implicit orthogonality between their magnetization state and the…
Magnetoelectric interactions in bilayers of magnetostrictive and piezoelectric phases are mediated by mechanical deformation. Here we discuss the theory and companion data for magnetoelectric (ME) coupling at electromechanical resonance…
The planar Hall effect (PHE), the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields, has been ascribed to the chiral anomaly and Berry curvature effects in Weyl semimetals. In the presence…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
Electric Hall effects generated by an in-plane magnetic field have recently gained attention owing to their intrinsic origin in topological electronic states and potential application in magnetic field sensing. In pratice, the measured…
Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization of long-range magnetic order down to atomic dimensions, and the prospect of novel spintronic devices with unique…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…