Related papers: Giga-Hertz quantized charge pumping in bottom gate…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
Motivated by recent experiment, we consider charging of a nanowire which is proximitized by a superconductor and connected to a normal-state lead by a single-channel junction. The charge $Q$ of the nanowire is controlled by gate voltage…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced…
We consider pumping through a small quantum dot separated from the leads by two point contacts, whose conductances, $G_{1}$ and $G_{2}$, serve as pumping parameters. When the dot is pincched, we find that there is a "resonance line" in the…
Surface acoustic waves (SAWs) are a powerful tool for controlling a wide range of quantum systems, particularly quantum dots (QDs) via their oscillating strain fields. The resulting energy modulation of these single photon sources can be…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
Recent theoretical calculations, demonstrating that quantized charge transfer due to adiabatically modulated potentials in mesoscopic devices can result purely from the interference of the electron wave functions (without invoking…
We investigate charge pumping in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a…
We proposed an experimentally feasible scheme of nano-plamonic switch and quantum router via the single self-assembled InGaAs/GaAs semiconductor quantum dot (SQD) with a V type three-level energy structure located between two silver…
We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long…
In a mesoscopic system, under zero bias voltage, a finite charge is transferred by quantum adiabatic pumping by adiabatically and periodically changing two or more control parameters. We obtained expressions for the pumped charge for a ring…
The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…
Quantum pumping through mesoscopic quantum dots is known to be enhanced by resonant transmission. The pumped charge is close to an integer number of electrons when the pumping contour surrounds a resonance, but the transmission remains…
A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be…
Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…
On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization…