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Quantum computing and quantum communication are remarkable examples of new information processing technologies that arise from the coherent manipulation of spins in nanostructures. We review our theoretical proposal for using electron spins…
A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a…
We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing…
A quantum computer is proposed in which information is stored in the two lowest electronic states of doped quantum dots (QDs). Many QDs are located in a microcavity. A pair of gates controls the energy levels in each QD. A Controlled Not…
After more than 30 years of validation of Moore's law, the CMOS technology has already entered the nanoscale (sub-100nm) regime and faces strong limitations. The nanowire transistor is one candidate which has the potential to overcome the…
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit…
We present a quantum optics theory, numerical calculations, and experiments on coupled quantumdots in semiconductor nanowire waveguides. We first present an analytical Green function theory tocompute the emitted spectra of two coupled…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
Charge-density-wave (CDW) is a modulation of the conduction electron density in a conductor. Under low temperature, it can spontaneously happen in some compounds that consist of anisotropic one-dimensional crystal structures, via a strong…
Neutral atom (NA) quantum systems are emerging as a leading platform for quantum computation, offering superior or competitive qubit count and gate fidelity compared to superconducting circuits and ion traps. However, the unique features of…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
We present transport spectroscopy of sub-gap states in a bottom gated InAs nanowire coupled to a normal lead and a superconducting aluminium lead. The device shows clearly resolved sub-gap states which we can track as the coupling…
We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under…
Nanolasers are considered ideal candidates for communications and data processing at chip-level thanks to their extremely reduced footprint, low thermal load and potentially outstanding modulation bandwidth, which in some case has been…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…
We study DC charge and spin transport through a weakly coupled quantum dot, driven by a non-adiabatic periodic change of system parameters. We generalize the model of Tien and Gordon to simultaneously oscillating voltages and tunnel…
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2…
Nanowires (NWs) of topological materials are emerging as an exciting platform to probe and engineer new quantum phenomena that are hard to access in bulk phase. Their quasi-one-dimensional geometry and large surface-to-bulk ratio unlock new…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
We propose a random matrix theory to describe the influence of a time-dependent external field on electron transport through open quantum dots. We describe the generation of the current by an oscillating field for the dot, connected to two…