Related papers: Interface effects on acceptor qubits in silicon an…
Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual…
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra…
Absorption spectra of neutral, negatively and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p-shell transitions, including the influence of nearby…
Understanding the effects of atomic structure modification in hematite photoanodes is essential for the rational design of high-efficiency functionalizations. Recently it was found that interface modification with Sn/Sb segregates…
The role of graded interfaces between materials in a cylindrical free-standing quantum wire with longitudinal heterostructures is theoretically investigated, by solving the Schr\"odinger equation within the effective mass approximation.…
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the…
A scalable, high-performance quantum processor can be implemented using near-resonant dipole-dipole interacting dopants in a solid state host. In this scheme, the qubits are represented by ground and subradiant states of effective dimers…
The combined effect of finite potential barriers and dielectric mismatch between dot and matrix on excitonic properties of semiconductor quantum dots has been studied. To avoid the unphysical divergence in the self-polarization energy which…
Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
An influence of nonlinear interference processes at quantum transitions under strong resonance electromagnetic fields on absorption, amplification and refractive indices as well as on four-wave mixing processes is investigated. Doppler…
The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface…
A possible two-qubit gate for optical quantum computing is the parity gate based on the weak Kerr effect. Two photonic qubits modulate the phase of a coherent state, and a quadrature measurement of the coherent state reveals the parity of…
Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an…
The description of a measuring process, such as that which occurs when a quantum point contact (QPC) detector is influenced by a nearby external electron which can take up two possible positions, provides a interesting application of the…
The effects of inserting impurity $\delta$-layers of various elements into a Co/IrMn exchange biased bilayer, at both the interface, and at given points within the IrMn layer a distance from the interface, has been investigated. Depending…
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence…
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
We analyze an interplay between the proximity effect and quantum interference of electrons in hybrid structures superconductor-normal metal-superconductor which contain several insulating barriers. We demonstrate that the dc Josephson…