Related papers: Mode selection in InAs quantum dot microdisk laser…
Here we report lasing action in lima\c{c}on-shaped GaAs microdisks with quantum dots (QDs) embedded. Although the intracavity ray dynamics is predominantly chaotic, high-$Q$ modes are concentrated in the region $\chi > \chi_c$ as a result…
We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the…
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is…
We demonstrate experimentally that lasing in a semiconductor microstadium can be optimized by controlling its shape. Under spatially uniform optical pumping, the first lasing mode in a GaAs microstadium with large major-to-minor-axis ratio…
Laser-driven operations are a common approach for engineering one- and two-qubit gates in trapped-ion arrays. Measuring key parameters of these lasers, such as beam sizes, intensities, and polarizations, is central to predicting and…
We demonstrate how the presence of gain-loss contrast between two coupled identical resonators can be used as a new degree of freedom to enhance the modulation frequency response of laser diodes. An electrically pumped microring laser…
Nanolasers have great potential as both on-chip light sources and optical barcoding particles. We demonstrate ultrasmall InGaP and InGaAsP disk lasers with diameters down to 360 nm (198 nm in height) in the red spectral range. Optically…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the…
We presented a detailed experimental study on lasing in GaAs microstadium with various shapes. Unlike most deformed microcavities, the lasing threshold varies non-monotonically with the major-to-minor-axis ratio of the stadium. Under…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing.…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
We have fabricated and studied the photoluminescence from microdisks containing single, selected self-assembled quantum dots. Using two electron beam lithography exposures and a two-step selective wet etching process, the dots were…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
The advent of the quantum gas microscope allowed for the in situ probing of ultracold gaseous matter on an unprecedented level of spatial resolution. The study of phenomena on ever smaller length scales as well as the probing of…
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we…
We report on the monolithic, two-step epitaxial growth of site-controlled InGaAs quantum dots via the buried stressor method with local quantum dot density variation. As a result of high fabrication accuracy, we achieve low lateral…
We have studied the steady state and dynamic optical properties of semiconductor microdisk lasers whose active region contains interface fluctuation quantum dots in GaAs/(Ga,Al)As quantum wells. Steady-state measurements of the stimulated…
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode…