Related papers: Silicon vacancy center in 4H-SiC: Electronic struc…
The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin-$\frac{3}{2}$ electronic state. However, optical spin initialization and readout are less efficient compared to…
Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic…
We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to the mode of a fully-tunable, fiber-based, optical resonator. We demonstrate that…
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon…
In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of…
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission…
The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotope present in a single centre. This is of interest for…
Hybrid quantum photonic systems connect classical photonics to the quantum world and promise to deliver efficient light-matter quantum interfaces while leveraging the advantages of both, the classical and the quantum, subsystems. However,…
Silicon-vacancy and tin-vacancy defects in diamond are of interest as alternative qubits to the NV center due to their superior optical properties. While the availability of optical transitions in these defects is one of their assets,…
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As…
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this…
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve the on-demand shallow spin-defect generation. In…
Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter applications. Detailed understanding of the properties of…
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical…
Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the…
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously…
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit…
The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal…
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed…
We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of…