Related papers: Memristor Load Current Mirror Circuit
We suggest a novel methodology to obtain a digital representation of analog signals and to perform its back-conversion using memristive devices. In the proposed converters, the same memristive systems are used for two purposes: as elements…
In this paper, we review the different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of flow of neurotransmitters in the biological brain. Brain like generalisation ability and area minimisation of…
The increase of current uniformity along of a resistive type superconductor fault current limiter (R-SFCL) in the design of this type of limiters is well perceived as an important issue. The non-uniform distribution of current in R-SFCL…
A content-addressable-memory compares an input search word against all rows of stored words in an array in a highly parallel manner. While supplying a very powerful functionality for many applications in pattern matching and search, it…
Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…
Emerging non-volatile memory (NVM), or memristive, devices promise energy-efficient realization of deep learning, when efficiently integrated with mixed-signal integrated circuits on a CMOS substrate. Even though several algorithmic…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of…
In order to evaluate the potential of MEMS deformable mirrors for open-loop applications, a complete calibration process was performed on a 1024-actuator mirror. The mirror must be perfectly calibrated to obtain deterministic membrane…
The Bessel filters are optimized to collect competent transient response due to a linear phase in the passband. In other words, during the filtering process, there will be comparatively impoverished frequency response with lower amplitude…
The dynamics of a semiconductor-laser array whose individual elements are coupled in a global way through an external mirror is numerically analysed. A coherent in-phase solution is seen to be preferred by the system at intermediate values…
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…
1T1R (1-transistor-1-resistor) memory crossbar arrays represent a promising solution for compute-in-memory matrix-vector multiplication accelerators and embedded or storage-class memory. However, the size and scaling of these arrays are…
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the…
We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical…
Because the local concentration of vacancies in any material is bounded, their motion must be accompanied by nonlinear effects. Here we look for such effects in a simple model for electric field driven vacancy motion in memristors, solving…
In order to clear up a question on possibility of a dc voltage proportional to the persistent current in normal metal and semiconductor mesoscopic loops conjectural causes of this phenomenon observed in superconductor loops is investigated.
Spin-split superconductors exhibit an electron-hole asymmetric spin-resolved density of states, but the symmetry is restored upon averaging over spin. On the other hand, asymmetry appears again in tunneling junctions of spin-split…