Related papers: Subthermal switching with nanomechanical relays
Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited…
A theory is developed to describe the coupled transport of energy and charge in networks of electron donor-acceptor sites which are seated in a thermally heterogeneous environment, where the transfer kinetics are dominated by Marcus-type…
We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main…
The dynamics of a single spin embedded in a the tunnel junction between ferromagnetic contacts is strongly affected by the exchange coupling to the tunneling electrons. Using time-dependent equation of motion for the spin under influence of…
One core challenge of nanoelectromechanical systems (NEMS) is their efficient actuation. A promising concept superseding resonant driving is self-oscillation. Here we demonstrate voltage-sustained self-oscillation of a nanomechanical charge…
We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
We measured the optical properties of mixed valent vanadium oxide nanoscrolls and their metal exchanged derivatives in order to investigate the charge dynamics in these compounds. In contrast to the prediction of a metallic state for the…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
We study the Coulomb drag effect in double layer electronic systems with local tunneling links. The possibility of tunneling between the layers leads to a pronounced exchange contribution to the transconductance, which is negative and…
We show that dipole-field induced antiferromagnetic coupling, or RKKY ferromagnetic coupling, between Co layers can strongly affect the low magnetic field switching behavior of Co/Cu/Co nanopillars. Whereas current-assisted switching at low…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…
We study both theoretically and experimentally switching dynamics in surface stabilized ferroelectric liquid crystal cells with asymmetric boundary conditions. In these cells the bounding surfaces are treated differently to produce…
The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different…
The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve…
Recent studies highlight the scientific importance and broad application prospects of two-dimensional (2D) sliding ferroelectrics, which prevalently exhibit vertical polarization with suitable stackings. It is crucial to understand the…
Multiferroic devices hold profound promise for ultra-low energy computing in beyond Moore's law era. The magnetization of a magnetostrictive shape-anisotropic single-domain nanomagnet strain-coupled with a piezoelectric layer in a…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…