Related papers: Effect of the interface resistance in non-local Ha…
In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be…
Spin transport properties of graphene non-local spin valve devices are typically determined from Hanle spin precession measurements by using a simplified solution of the one-dimensional Bloch-Torrey equation which assumes infinitely long…
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin…
The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement…
Graphene is a promising substrate for future spintronics devices owing to its remarkable electronic mobility and low spin-orbit coupling. Hanle precession in spin valve devices is commonly used to evaluate the spin diffusion and spin…
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a…
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in…
We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and…
We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on…
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…
The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of…
We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable…
We observe anisotropic Hanle lineshape with unequal in-plane and out-of-plane non-local signals for spin precession measurements carried out on lateral metallic spin valves with transparent interfaces. The conventional interpretation for…
It is shown that in spin injection experiments the interplay between external magnetic field and alternating current can be observed already on a single ferromagnet/normal metal interface. The interface resistance is predicted to exhibit…
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…
Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing…