Related papers: Surface and Step Conductivities on Si(111) Surface…
The impact of surface roughness on conductive heat transfer across nanoscale contacts is investigated by means of scanning thermal microscopy. Silicon surfaces with out-of-plane rms roughness of ~0, 0.5, 4, 7 and 11 nm are scanned both…
We present an in-depth analysis of the atomic and electronic structure of the quasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based on Scanning Tunneling Microscopy and Spectroscopy (STM and STS), Rutherford…
A nearly-free-electron (NFE) model to describe STM spectroscopy of (111) metal surfaces with Kondo impurities is presented. Surface states are found to play an important role giving a larger contribution to the conductance in the case of…
We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron…
Several methods are constructed for large-scale electronic structure calculations. Test calculations are carried out with up to 10^7 atoms. As an application, cleavage process of silicon is investigated by molecular dynamics simulation with…
We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2…
We describe a setup and procedures for contactless optical 3D-metrology of silicon micro-strip sensors. Space points are obtained by video microscopy and a high precision XY-table. The XY-dimensions are obtained from the movement of the…
The topological order of single-crystal Bi and its surface states on the (111) surface are studied in detail based on empirical tight-binding (TB) calculations. New TB parameters are presented that are used to calculate the surface states…
Sn adatoms on a Si(111) substrate with 1/3 monolayer coverage form a two-dimensional triangular adatom lattice with one unpaired electron per site and an antiferromagnetic Mott insulating state. The Sn layers can be modulation hole-doped…
An electrodynamic technique is developed for determining the components of surface impedance and complex conductivity tensors of HTSC single crystals on the basis of measured quantities of a quality factor and a resonator frequency shift. A…
Functional properties of nanomaterials strongly depend on their surface atomic structure, but they often become largely different from their bulk structure, exhibiting surface reconstructions and relaxations. However, most of the surface…
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe…
This paper explores the electrical and thermal conductivity of complex contact spots on the surface of a half-space. Employing an in-house Fast Boundary Element Method implementation, various complex geometries were studied. Our…
We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at intermediate temperatures'' is incorrect and misleading. In…
Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling…
Molecular dynamics simulations have been performed to understand true atomic resolution, which has been observed on the Si(111)-7$\times$7 surface by dynamic force microscopy in ultra high vacuum(UHV). Stable atomic-scale contrast is…
The surface reconstruction of SrTiO$_3$(110) is studied with scanning tunneling microscopy and density functional theory (DFT) calculations. The reversible phase transition between (4$\times$1) and (5$\times$1) is controlled by adjusting…
We theorize the surface step characterization by reflected incoherent-light differential interference microscopy with consideration of the optical diffraction effect. With the integration of localization analysis, we develop a quantitative…
We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode…
Si(001)-(2$\times$1) surface is one of the many two-dimensional systems of scientific and applied interest. It has two surface state bands (1) anti-bonding pi* band, which has acceptor states and (2) bonding pi band, which has donor states.…