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We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage,…
A theory is developed to describe the coupled transport of energy and charge in networks of electron donor-acceptor sites which are seated in a thermally heterogeneous environment, where the transfer kinetics are dominated by Marcus-type…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature.…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
We show that a quantum thermal transistor can also cause the transistor effect - where one out of three terminals can control the flow of heat current in the other two - with good amplification properties in the transient regime for certain…
The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…
Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…
This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a…
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device…
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The…
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be…
Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…
The total impedance of a ladder-shape network consisting of inductors and capacitors does not converge to a certain value when the steps of the network increased. In this paper, we analyze this effect in frequency domain. We find that in…
Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses.…
We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This…
We analyze the effect of a gate on the conductance of molecules by separately evaluating the gate-induced polarization and the potential shift of the molecule relative to the leads. The calculations use ab initio density functional theory…