Related papers: Hopping Conduction via Ionic Liquid Induced Silico…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…
In order to make a densely packed assembly of undoped semiconductor nanocrystals conductive, it is usually gated by a room temperature ionic liquid. The ionic liquid enters the pores of the super-crystal assembly under the influence of an…
We construct a simple holographic model incorporating higher-order coupling terms for electron self-interactions. It can exhibit typical behavior of a Mott insulator, including a metal-insulator transition and a decrease in DC conductivity…
The observed robustly quantized Hall conductance in quantum Hall systems and Chern insulators (CI) have so far been understood in terms of the topology of isolated systems, which are not coupled to leads. It is assumed that the leads act as…
We report the pressure study of a doped organic superconductor with Hall coefficient and conductivity measurements. We find that maximally enhanced superconductivity and a non-Fermi liquid appear around a certain pressure where mobile…
Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level…
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
The mechanism of -U center formation in high-$T_{c}$ superconductors (HTS) with doping is considered. It is shown that the transition of HTS from insulator to metal passes through the particular dopant concentration range where the local…
We have studied the ground state properties of Hubbard model on long six-leg square cylinders with doped hole concentration per site $5.55\% \leq \delta\leq 12.5\%$ using density-matrix renormalization group. By keeping a large number of…
Hydrogenated silicenes possess peculiar properties owing to the strong H-Si bonds, as revealed by an investigation using first principles calculations. The various charge distributions, bond lengths, energy bands, and densities of states…
Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a…
Using simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating along GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructures, complex ac conductance of the latters has been determined. In the magnetic fields…
We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating…
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and…
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make…
For reasonable parameters a hole bound to a Na^{+} acceptor in Ca_{2-x}Na_{x}CuO_{2}Cl_{2} has a doubly degenerate ground state whose components can be represented as states with even (odd) reflection symmetry around the x(y) -axes. The…
A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…