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We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…

Strongly Correlated Electrons · Physics 2008-09-27 T. Ferrus , R. George , C. H. W. Barnes , N. Lumpkin , D. J. Paul , M. Pepper

Si(001)-(2$\times$1) surface is one of the many two-dimensional systems of scientific and applied interest. It has two surface state bands (1) anti-bonding pi* band, which has acceptor states and (2) bonding pi band, which has donor states.…

Mesoscale and Nanoscale Physics · Physics 2009-02-03 Hassan Raza , Tehseen Z. Raza , Edwin C. Kan

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC…

Topological crystalline insulators (TCIs) possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has…

Mesoscale and Nanoscale Physics · Physics 2017-10-17 Ying Wang , Guoyu Luo , Junwei Liu , R. Sankar , Nan-Lin Wang , Fangcheng Chou , Liang Fu , Zhiqiang Li

Complex AC-conductance, $\sigma^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $\Delta\Gamma=\Gamma(H)-\Gamma(0)$, and velocity, $\Delta…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 I. L. Drichko , A. M. Diakonov , I. Yu. Smirnov , A. V. Suslov , Y. M. Galperin , A. I. Yakimov , A. I. Nikiforov

Atomic layers deposited on semiconductor substrates introduce a platform for the realization of the extended electronic Hubbard model, where the consideration of electronic repulsion beyond the onsite term is paramount. Recently, the onset…

Superconductivity · Physics 2022-05-12 Sebastian Wolf , Domenico Di Sante , Tilman Schwemmer , Ronny Thomale , Stephan Rachel

We show that in the new topological-insulator compound Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that…

Materials Science · Physics 2011-07-28 A. A. Taskin , Zhi Ren , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

Recent measurements on ion conducting glasses have revealed that conductivity spectra for various temperatures and ionic concentrations can be superimposed onto a common master curve by an appropriate rescaling of the conductivity and…

Materials Science · Physics 2009-10-31 M. Porto , P. Maass , M. Meyer , A. Bunde , W. Dieterich

Recent experiments measuring the electrical conductivity of DNA molecules highlight the need for a theoretical model of ion transport along a charged surface. Here we present a simple theory based on the idea of unbinding of ion pairs. The…

Soft Condensed Matter · Physics 2009-10-23 Brian Skinner , M. S. Loth , B. I. Shklovskii

We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…

Mesoscale and Nanoscale Physics · Physics 2015-01-27 Sanghyun Jo , Davide Costanzo , Helmuth Berger , Alberto F. Morpurgo

Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are…

Understanding the physics of doping a charge transfer insulator is the most important problem in high-temperature superconductivity. In this work, we show that an in-gap bound state emerges from the localized hole of the doped charge…

Superconductivity · Physics 2024-08-02 Pengfei Li , Yang Shen , Mingpu Qin , Kun Jiang , Jiangping Hu , Tao Xiang

Topological superconductors may undergo transitions between phases with different topological numbers which, like the case of topological insulators, are related to the presence of gapless (Majorana) edge states. In $\mathbb{Z}$ topological…

Superconductivity · Physics 2015-06-15 Pedro D. Sacramento , Miguel A. N. Araújo , Eduardo V. Castro

In moir\'e-patterned van der Waals structures of transition metal dichalcogenides, correlated insulators can form under integer and fractional fillings, whose transport properties are governed by various quasiparticle excitations including…

Mesoscale and Nanoscale Physics · Physics 2025-09-04 Zijian Ma , Hongyi Yu

The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…

The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 I. Pallecchi , M. Codda , E. Galleani d'Agliano , D. Marre' , A. D. Caviglia , N. Reyren , S. Gariglio , J. -M. Triscone

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining…

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…

Strongly Correlated Electrons · Physics 2009-11-10 S. Nakatsuji , V. Dobrosavljevic , D. Tanaskovic , M. Minakata , H. Fukazawa , Y. Maeno

Ionic transport in solid electrolytes can often be approximated as ions performing a sequence of hops between distinct lattice sites. If these hops are uncorrelated, quantitative relationships can be derived that connect microscopic hopping…

Materials Science · Physics 2017-10-09 Benjamin J. Morgan

Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…