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Related papers: Strain engineering in semiconducting two-dimension…

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Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain,…

Mesoscale and Nanoscale Physics · Physics 2019-03-08 Lukas Mennel , Marco M. Furchi , Stefan Wachter , Matthias Paur , Dmitry K. Polyushkin , Thomas Mueller

Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of…

Materials Science · Physics 2015-11-24 Habib Rostami , Rafael Roldán , Emmanuele Cappelluti , Reza Asgari , Francisco Guinea

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain…

Materials Science · Physics 2021-05-11 Felix Carrascoso , Hao Li , Riccardo Frisenda , Andres Castellanos-Gomez

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However,…

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…

Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…

Materials Science · Physics 2022-10-07 Isha M. Datye , Alwin Daus , Ryan W. Grady , Kevin Brenner , Sam Vaziri , Eric Pop

Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

Mesoscale and Nanoscale Physics · Physics 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam

Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…

Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating…

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…

Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because…

Optics · Physics 2020-02-11 Ahmed Raza Khan , Teng Lu , Wendi Ma , Yuerui Lu , Yun Liu

This tutorial review presents an overview of the basic theoretical aspects of two-dimensional (2D) crystals. We revise essential aspects of graphene and the new families of semiconducting 2D materials, like transition metal dichalcogenides…

Mesoscale and Nanoscale Physics · Physics 2017-08-03 Rafael Roldán , Luca Chirolli , Elsa Prada , Jose Angel Silva-Guillén , Pablo San-Jose , Francisco Guinea

We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS$_{2}$ via the deposition of stressed thin films to encapsulate exfoliated flakes. With this technique we can…

Mesoscale and Nanoscale Physics · Physics 2021-07-15 Tara Peña , Shoieb A. Chowdhury , Ahmad Azizimanesh , Arfan Sewaket , Hesam Askari , Stephen M. Wu

The fascinating realm of strain engineering and wetting transitions in two-dimensional (2D) materials takes place when placed on a two-dimensional array of nanopillars or one-dimensional rectangular grated substrates. Our investigation…

Mesoscale and Nanoscale Physics · Physics 2024-06-19 Davoud Adinehloo , Joshua R. Hendrickson , Vasili Perebeinos

Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…

Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…

Materials Science · Physics 2026-04-30 Yangchen He , Jessica Kienbaum , Wuzhang Fang , Hongrui Ma , Ying Wang , Ping Yuan , Daniel A. Rhodes

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin…

Materials Science · Physics 2014-10-14 R. Roldán , J. A. Silva-Guillén , M. P. López-Sancho , F. Guinea , E. Cappelluti , P. Ordejón

There has been a massive growth in the study of transition metal dichalcogenides (TMDs) over the past decade, based upon their interesting and unusual electronic, optical and mechanical properties, such as tuneable and strain-dependent…

Applied Physics · Physics 2020-11-02 Fang Wang , Suhao Li , Mark A. Bissett , Ian A. Kinloch , Zheling Li , Robert J. Young

We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and…

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