Related papers: Optical loss by surface transfer doping in silicon…
Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components.…
Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third-order Kerr nonlinearity, enabling salient and…
Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A…
The 2-{\mu}m waveband, emerging as a highly promising candidate for optical communication, offers an extended wavelength window for high-speed optical transmission. Despite its potential, the development of integrated electro-optic (E/O)…
Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the…
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and…
Photons do not carry sufficient momentum to induce indirect optical transitions in semiconducting materials such as silicon, necessitating the assistance of lattice phonons to conserve momentum. Compared to direct bandgap semiconductors,…
Motivated by the recent optical conductivity experiments on Bi_2Sr_2CaCu_2O_{8+delta} films, we examine the possible origin of low-frequency dissipation in the superconducting state. In the presence of spatial inhomogeneity of the local…
All-dielectric effective-medium-clad waveguides have been widely exploited in terahertz communications owing to their extremely low loss, low dispersion, and broad bandwidth. In this work, we propose a substrateless effective-medium-slot…
This paper investigates the propagation characteristics of circular waveguides whose interior surface is coated with a thin metamaterial liner possessing dispersive, negative, and near-zero permittivity. A field analysis of this system…
Organic solar cells (OSCs) are uniquely suited for semitransparent applications due to their adjustable absorption spectrum. However, most high-performance semitransparent cells reported to date are based on materials that have shown high…
We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…
On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear…
We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission…
Millimeter-wave technologies are essential for future high-speed wireless communications. However, a fundamental challenge remains in the form of severe free-space path loss, where the power density decreases inversely with the square of…
High refractive index contrast optical microdisk resonators fabricated from silicon-on-insulator wafers are studied using an external silica fiber taper waveguide as a wafer-scale optical probe. Measurements performed in the 1500 nm…
In this work we present a detailed analysis of individual loss mechanisms in silicon nitride partial Euler bends at a wavelength of 850 nm. This structure optimizes the transmission through small radii optical waveguide bends. The partial…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but few device configurations has been explored for a deterministic control of a space…
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically…