Related papers: Optical loss by surface transfer doping in silicon…
Quantum processors using superconducting qubits suffer from dielectric loss leading to noise and dissipation. Qubits are usually designed as large capacitor pads connected to a non-linear Josephson junction (or SQUID) by a superconducting…
In practical electronic applications, where doping is crucial to exploit large-area two-dimensional (2D) semiconductors, surface charge transfer doping (SCTD) has emerged as a promising strategy to tailor their electrical characteristics.…
Semiconducting Barrier Discharges (SeBDs) generate uniform ionization waves in air at atmospheric pressure. In this work, we investigate how externally applied irradiation synchronized with the discharge can mimic photoconductive-type…
Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming…
We demonstrate wavelength conversion of QAM signals including 32GBd QPSK and 10GBd 16QAM in a 50cm long high index doped glass spiral waveguide. The quality of the generated idlers over a 10nm bandwidth is sufficient to achieve a BER…
Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband…
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of…
Throughout history, the development of novel technologies for long-distance communications has had profound influences on societal progress. Landmark scientific discoveries have enabled the transition from short message transmissions via…
Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account…
Sn-doped In$_2$O$_3$ or ITO is the most widely used transparent conducting oxide. We use first-principles calculations to investigate the limitations to its transparency due to free-carrier absorption mediated by phonons or charged defects.…
A stepped-impedance low-pass filter with integrated hollow waveguide absorbers is presented. The filter combines low insertion loss in the passband with strong attenuation at high frequencies, making it well suited for superconducting…
Exact calculations of the transmittance of surface corrugated optical waveguides are presented. The elastic scattering of diffuse light or other electromagnetic waves from a rough surface induces a diffusive transport along the waveguide…
Future laser-interferometric gravitational wave detectors (GWDs) will potentially employ test mass mirrors from crystalline silicon and a laser wavelength of $1550\,\rm{nm}$, which corresponds to a photon energy below the silicon bandgap.…
Silicon nitride is awell-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of…
A thin conducting sheet - graphene, for example - transmits, absorbs, and reflects radiation. A sheet that is very thin, even vanishingly so, can still produce 50% absorption at normal incidence if it has conductivity corresponding to half…
Transparent conducting oxides (TCOs) are essential to many technologies. These materials are doped (\emph{n}- or \emph{p}-type) oxides with a large enough band gap (ideally $>$3~eV) to ensure transparency. However, the high carrier…
Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however…
Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to…
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of…
We investigate the effect of a lower index oxide layer inclusion within a highly doped silica glass slot waveguide for optimized supercontinuum generation at telecom wavelengths. By controlling the thickness of the oxide slot, we…