Related papers: Reconfigurable Boolean Logic using Magnetic Single…
Memcomputing logic gates generalize the traditional Boolean logic gates for operation in the reverse direction. According to the literature, this functionality enables the efficient solution of computationally-intensive problems including…
In this paper, we present a general reconfigurable multiple-valued logic circuit. The proposed architecture is based on threshold logic gate and is compatible with binary logic, which allows a designer to easily integrate multiple valued…
In a multi-terminal setup, when time-reversal symmetry is broken by a magnetic field, the heat flows can be managed by designing a device with programmable Boolean behavior. We show that such device can be used to implement operations like…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…
Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…
Based on the understanding that chemical bonds can act as tunnel junctions in the Coulomb blockade regime, and on the technical ability to coat a DNA strand with metal, we suggest that DNA can be used to built logical devices. We discuss…
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
A reconfigurable logic gate is proposed in a two-dimensional double quantum wire system with a coupling window enabled by a Rashba field. Manipulating the spin states of incoming electrons several quantum logic gates (OR, AND, XOR, CNOT)…
Reversible logic gates were previously implemented in superconducting circuits as adiabatic-reversible gates, which are powered with a sufficiently slow clock. In contrast, we are studying ballistic-reversible gates, where fluxons serve to…
We propose a method for implementation of an universal set of one- and two-quantum-bit gates for quantum computation in the system of two coupled electrons with constant non-diagonal exchange interaction. Suppression of the exchange…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous…
We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…
Current advances in emerging memory technologies enable novel and unconventional computing architectures for high-performance and low-power electronic systems, capable of carrying out massively parallel operations at the edge. One emerging…