Related papers: Carrier transport in reverse-biased graphene/semic…
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…
Nonreciprocal superconducting devices have attracted growing interest in recent years as they potentially enable directional charge transport for applications in superconducting quantum circuits. Specifically, the superconducting diode…
A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott…
Using the semiclassical quantum Boltzmann theory and employing the Dirac model with twist angle-dependent Fermi velocity we obtain results for the electrical resistivity, the electronic thermal resistivity, the Seebeck coefficient, and the…
We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through…
Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface…
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…
The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived for finite temperature. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case.…
In this work, we analyse the reverse current mechanisms in GaN Schottky barrier diodes (SBDs) grown on sapphire and native GaN substrates. For the sapphire-substrate sample, two conduction mechanisms are identified: Poole-Frenkel emission…
We study transport properties of graphene-based p-n junctions irradiated by an electromagnetic field (EF). The resonant interaction of propagating quasiparticles with an external monochromatic radiation opens dynamical gaps in their…
Disordered Fermi-Dirac distributions are used to model, within a straightforward and essentially phenomenological Boltzmann equation approach, the electron/hole transport across graphene puddles. We establish, with striking experimental…
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…
We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless…
In this study, we investigate the charge transport properties of semiconducting armchair graphene nanoribbons (AGNRs) and heterostructures through their topological states (TSs), with a specific focus on the Coulomb blockade region. Our…
In condensed matter physics, transport measurements are essential not only for the characterization of materials, but also to discern between quantum phases and identify new ones. The extension of these measurements into atomic quantum…
Noncolinear magnetic texture breaks the spin-sublattice symmetry which gives rise to a spin-splitting effect. Inspired by this, we study the spin-dependent transport properties in a noncolinear antiferromagnetic fractal structure, namely,…
Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron…
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with…
We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the…