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Related papers: Enhancing Magnetic Ordering in Cr-doped Bi2Se3 usi…

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We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

Materials Science · Physics 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using…

Materials Science · Physics 2014-01-06 Jian-Min Zhang , Wenmei Ming , Zhigao Huang , Gui-Bin Liu , Xufeng Kou , Yabin Fan , Kang L. Wang , Yugui Yao

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a…

Mesoscale and Nanoscale Physics · Physics 2015-08-19 Mingda Li , Cui-Zu Chang , Brian. J. Kirby , Michelle Jamer , Wenping Cui , Lijun Wu , Yimei Zhu , Don Heiman , Ju Li , Jagadeesh Moodera

Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with N\'eel order in an antiferromagnetic CrSb and…

The realization of long range and insulating ferromagnetic states in topological insulator (TI) has been a pressing issue since its discovery. Only recently, such state was achieved in Cr-doped Bi2-xSbxTe3, leading to the discovery of…

Materials Science · Physics 2016-08-31 Bei Deng , Yiou Zhang , S. B. Zhang , Yayu Wang , Ke He , Junyi Zhu

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating…

Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…

Materials Science · Physics 2024-09-02 Sumana Paul , Moumita Das , Sujoy Datta , Raja Chakraborty , Prabhat Mandal , P. K. Giri

We present a detailed investigation of the magnetic and structural properties of magnetically doped 3D topological insulator Bi2Se3. From muon spin relaxation measurements in zero magnetic field, we find that even 5% Fe doping on the Bi…

Strongly Correlated Electrons · Physics 2012-03-23 Z. Salman , E. Pomjakushina , V. Pomjakushin , A. Kanigel , K. Chashka , K. Conder , E. Morenzoni , T. Prokscha , K. Sedlak , A. Suter

Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin…

Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we…

The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide…

Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in…

Introducing magnetic order into a topological insulator (TI) system has been attracting much attention with an expectation of realizing exotic phenomena such as quantum anomalous Hall effect (QAHE) or axion insulator states. The magnetic…

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good…

Mesoscale and Nanoscale Physics · Physics 2014-03-07 E. Lahoud , E. Maniv , M. Petrushevsky , M. Naamneh , A. Ribak , S. Wiedmann , L. Petaccia , K. B. Chashka , Y. Dagan , A. Kanigel

We theoretically analyze the topological insulator (TI) surface state mediated interactions between local moments in a proximate 2D ferromagnetic insulator (FMI) motivated by recent experiments that show a significant increase in the Curie…

Strongly Correlated Electrons · Physics 2025-10-24 Murod Mirzhalilov , Nandini Trivedi , Mohit Randeria

This work demonstrates dramatically modified spin dynamics of magnetic insulator (MI) by the spin-momentum locked Dirac surface states of the adjacent topological insulator (TI) which can be harnessed for spintronic applications. As the…

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites,…

Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties…

We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of…

Mesoscale and Nanoscale Physics · Physics 2021-05-11 Yaron Jarach , Gad Koren , Netanel H. Lindner , Amit Kanigel

Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through…

Materials Science · Physics 2020-03-11 Y. S. Hou , R. Q. Wu
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