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Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…

Materials Science · Physics 2016-06-06 F. -T. Huang , F. Xue , B. Gao , L. H. Wang , X. Luo , W. Cai , X. Lu , J. M. Rondinelli , L. Q. Chen , S. -W. Cheong

Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…

Mesoscale and Nanoscale Physics · Physics 2022-10-07 Laurent Molino , Leena Aggarwal , Vladimir Enaldiev , Ryan Plumadore , Vladimir Falko , Adina Luican-Mayer

The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric (FE) is a defect of the ``field'' type. The…

Materials Science · Physics 2009-11-10 A. M. Bratkovsky , A. P. Levanyuk

The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic…

Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of…

Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with the ferroelectric transition of about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the…

Materials Science · Physics 2009-11-10 H. F. Tian , H. C. Yu , X. H. Zhu , Y. G. Wang , D. N. Zheng , H. X. Yang , J. Q. Li

Interfaces can differ from their parent compounds in terms of charge, spin, and orbital orders and are fertile ground for emergent phenomena, strongly correlated physics, and device applications. Here, we discover that ferroelectric order…

Superconductivity · Physics 2025-06-19 M. D. Dong , X. B. Cheng , M. Zhang , J. Wu

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet…

Materials Science · Physics 2015-06-25 Chun-Gang Duan , Sitaram S. Jaswal , Evgeny Y. Tsymbal

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a…

Superconductivity · Physics 2012-06-05 J. Biscaras , N. Bergeal , S. Hurand , C. Grossetete , A. Rastogi , R. C. Budhani , D. LeBoeuf , C. Proust , J. Lesueur

Excess charge on polar surfaces of ionic compounds is commonly described by the two-dimensional electron gas (2DEG) model, a homogeneous distribution of charge, spatially-confined in a few atomic layers. Here, by combining scanning probe…

After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3 system, the recent discovery of a superconducting two-dimensional electron gases (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the…

Superconductivity · Physics 2022-08-24 S. Mallik , G. Ménard , G. Saïz , H. Witt , J. Lesueur , A. Gloter , L. Benfatto , M. Bibes , N. Bergeal

The two-dimensional electron gas (2DEG) at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has become one of the most fascinating and highly-debated oxide systems of recent times. Here we propose that a one-dimensional electron…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 N. C. Bristowe , T. Fix , M. G. Blamire , P. B. Littlewood , Emilio Artacho

The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in…

Superconductivity · Physics 2012-07-31 Manan Mehta , D. A. Dikin , C. W. Bark , S. Ryu , C. M. Folkman , C. B. Eom , V. Chandrasekhar

Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as…

Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…

Disordered Systems and Neural Networks · Physics 2022-01-05 Guillaume Rapin , Sophia Ehrensperger , Cédric Blaser , Nirvana Caballero , Patrycja Paruch

Two-dimensional electron gas due to semiconductor interfaces can have high mobility and exhibits superconductivity, magnetism, and other exotic properties that are unexpected in constituent bulk materials. We study crystal structures,…

Materials Science · Physics 2019-06-13 Xue-Jing Zhang , Bang-Gui Liu

Thermodynamic theory is developed for the ferroelectric phase transition of an ultrathin film in equilibrium with a chemical environment that supplies ionic species to compensate its surface. Equations of state and free energy expressions…

Materials Science · Physics 2015-05-20 G. Brian Stephenson , Matthew J. Highland

Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous…

General features of finite size effects in the ferroelectric-semiconductor film under open-circuited electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature…

Materials Science · Physics 2015-06-19 Eugene A. Eliseev , Sergei V. Kalinin , Anna N. Morozovska

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and…

Materials Science · Physics 2014-01-07 P. K. Rout , Himanshu Pandey , Lijun Wu , Anupam , P. C. Joshi , Z. Hossain , Yimei Zhu , R. C. Budhani