Finite size effects in ferroelectric-semiconductor thin films under open-circuited electric boundary conditions
Abstract
General features of finite size effects in the ferroelectric-semiconductor film under open-circuited electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different compared to the short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. This analysis is relevant to the behavior of the free-standing ferroelectric films and scanning-probe microscopy based experiments on free ferroelectric surfaces.
Keywords
Cite
@article{arxiv.1404.6069,
title = {Finite size effects in ferroelectric-semiconductor thin films under open-circuited electric boundary conditions},
author = {Eugene A. Eliseev and Sergei V. Kalinin and Anna N. Morozovska},
journal= {arXiv preprint arXiv:1404.6069},
year = {2015}
}
Comments
28 pages, 5 figures, 1 table and supplementary material Accepted to the Journal of Applied Physics