English

Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO$_3$ interface

Materials Science 2014-01-07 v2

Abstract

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility (\approx 104^4 cm2^2V1^{-1}s1^{-1}) charge transport in epitaxial films of Co2_2MnSi and Co2_2FeSi grown on (001) SrTiO3_3. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications.

Keywords

Cite

@article{arxiv.1208.3099,
  title  = {Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO$_3$ interface},
  author = {P. K. Rout and Himanshu Pandey and Lijun Wu and Anupam and P. C. Joshi and Z. Hossain and Yimei Zhu and R. C. Budhani},
  journal= {arXiv preprint arXiv:1208.3099},
  year   = {2014}
}