Related papers: Room-temperature antiferromagnetic memory resistor
Heavy-fermion metals exhibit a plethora of low-temperature ordering phenomena, among them the so-called hidden-order phases that in contrast to conventional magnetic order are invisible to standard neutron diffraction. One of the oldest and…
Anti-ferromagnetic materials have the possibility to offer ultra fast, high data density spintronic devices. A significant challenge is the reliable detection of the state of the antiferromagnet, which can be achieved using exchange bias.…
We investigate magnetic ordering in metallic Ba[Fe(1-x)Mn(x)](2)As(2) and discuss the unusual magnetic phase, which was recently discovered for Mn concentrations x > 10%. We argue that it can be understood as a Griffiths-type phase that…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…
We present neutron diffraction data for the cubic-heavy-fermion YbBiPt that show broad magnetic diffraction peaks due to the fragile short-range antiferromagnetic (AFM) order persist under an applied magnetic-field $\mathbf{H}$. Our results…
Dynamic magnetic properties of $\mathrm{Y_{0.7}Ca_{0.3}MnO_{3}}$ are reported. The system appears to attain local ferromagnetic order at $T_{\mathrm{SRF}} \approx 70$ K. Below this temperature the low field magnetization becomes history…
A negative-positive-negative switching behavior of magnetoresistance (MR) with temperature is observed in a ferromagnetic shape memory alloy Ni_1.75Mn_1.25Ga. In the austenitic phase between 300 and 120 K, MR is negative due to s-d…
The development of compact and tunable room temperature sources of coherent THz-frequency signals would open a way for numerous new applications. The existing approaches to THz-frequency generation based on superconductor Josephson…
An antiferromagnet emits spin currents when time-reversal symmetry is broken. This is typically achieved by applying an external magnetic field below and above the spin-flop transition or by optical pumping. In this work we apply optical…
Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets.…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric substrate and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a…
Magnetic materials with high mobilities are intriguing subject of research from both fundamental and application perspectives. Based on first-principle calculations, we investigate the physical properties of the already synthesized AMnBi(A…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Energy minimization at T=0 and Monte Carlo simulations at T>0 have been performed for 2D and 3D random-field and random-anisotropy systems of up to 100 million classical spins. The main finding is that 3D random-anisotropy systems…
Changes of the magnetic and crystal structure on the microscopic scale in 40 nm FeRh thin films have been applied to investigate the phenomena of a disorder induced ferromagnetism at room temperature initiated through light ion-irradiation…
Electrical resistivity and ac-susceptibility measurements under high pressure were carried out in high-quality single crystals of $\alpha$-Mn. The pressure-temperature phase diagram consists of an antiferromagnetic ordered phase (0<$P$<1.4…
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their…
The design and fabrication of room-temperature ferrotoroidic materials and magnetic semiconductors are recognized worldwide as a great challenge, and of both theoretical and practical importance in the field of condensed matter physics and…
Counterintuitive order-disorder phenomena emerging in antiferromagnetically coupled spin systems have been reported in various studies. Here we perform a systematic effective field theory analysis of two-dimensional bipartite quantum…