Related papers: Room-temperature antiferromagnetic memory resistor
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der…
Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in…
Magnetization, nuclear magnetic resonance, high-resolution x-ray diffraction and magnetic field-dependent neutron diffraction measurements reveal a novel magnetic ground state of Ba{0.60}K{0.40}Mn2As2 in which itinerant ferromagnetism (FM)…
We investigated the reversible ferromagnetic (FM) behavior of pure and Co doped CeO2 nanopowders. The as-sintered samples displayed an increasing paramagnetic contribution upon Co doping. Room temperature FM is obtained simply by performing…
Multiferroic materials have undergone extensive research in the past two decades in an effort to produce a sizable room-temperature magneto-electric (ME) effect in either exclusive or composite materials for use in a variety of electronic…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
Single crystals of La2Ni7 have been grown out of a binary, La-Ni melt. Temperature dependent, zero magnetic field, specific heat, electrical resistivity, and low field magnetization measurements indicate that there is a series of…
The thermal expansion and magnetic properties of antiperovskite manganese nitrides Ag1-xNMn3+x were reported. The substitution of Mn for Ag effectively broadens the temperature range of negative thermal expansion and drives it to cryogenic…
Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were…
A systematic study of thermomagnetic irreversibility CoS$_{1.76}$Se$_{0.24}$ has been carried out. Our study shows that the resistivity at low temperature can be tuned by cooling in different magnetic fields and the critical field required…
The N$\acute{\rm e}$el temperature of the new frustrated family of Sr\emph{RE}$_2$O$_4$ (\emph{RE} = rare earth) compounds is yet limited to $\sim$ 0.9 K, which more or less hampers a complete understanding of the relevant magnetic…
Monte Carlo simulations have been used to study magnetic ordering in coupled anisotropic ferro/antiferromagnetic (FM/AFM) films of classical Heisenberg spins. We consider films with flat interfaces that are fully uncompensated as well as…
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter. Such coupling is possible via the Dzyaloshinskii-Moriya (DM) interaction but…
Magnetic materials have found wide application ranging from electronics and memories to medicine. Essential to these advances is the control of the magnetic order. To date, most room-temperature applications have a fixed magnetic moment…
Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the…
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/{\alpha}-Fe2O3 bilayers where the {\alpha}-Fe2O3 is an antiferromagnetic…
A detailed investigation of the first order antiferromagnetic insulator (AFI) to ferromagnetic metal (FMM) transition in $Nd{_{0.5}}Sr{_{0.5}}MnO{_{3}}$ is carried out by resistivity and magnetization measurements. These studies reveal…
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties,…
We report the magnetic, magnetocaloric, and magnetotransport properties of the semi-Heusler alloy Cu0.85Ni0.15MnSb, which exhibits coexistence of antiferromagnetic (AFM) and ferromagnetic (FM) phases. A broad magnetic phase transition is…