Related papers: Room-temperature antiferromagnetic memory resistor
Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…
Antiferromagnets (AFMs) are promising materials for future high-frequency field-free spintronic applications. Self-localized spin structures can enhance their capabilities and introduce new functionalities to AFM-based devices. Here we…
When a polarized light beam is incident upon the surface of a magnetic material, the reflected light undergoes a polarization rotation. This magneto-optical Kerr effect (MOKE) has been intensively studied in a variety of ferro- and…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
Spin-split antiferromagnets have significance for antiferromagnetic (AFM) spintronics due to their momentum dependent spin polarization which can be exploited for the control and detection of the AFM order parameter. Here, we explore the…
The inference of Ying et al. [EPL 104, 67005 (2013)] of a composition-induced change from c-axis ordered-moment alignment in a collinear A-type antiferromagnetic (AFM) structure (AFMI) at small x to ab-plane alignment in an unknown AFM…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…
We investigate slow dynamics of collection of a few antiferromagnetic NiO nanoparticles. The zero-field cooled magnetization exhibits size dependent fluctuations. We find memory effects in field cooled magnetization, as well as aging…
The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to…
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…
The ability to rapidly manipulate domain walls (DWs) in magnetic materials is key to developing novel high-speed spintronic memory and computing devices. Antiferromagnetic (AFM) materials present a particularly promising platform due to…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
In ferromagnetic alloys with shape memory large reversible strains can be obtained by rearranging the martensitic domain structure by a magnetic field. Magnetization through displacement of domain walls is possible in the presence of high…
Employing the state-of-the-art Density Functional Theory with both GGA and hybrid HSE06 functional along with the incorporation of spin-orbit coupling, we have engineered stable room temperature ferromagnetism in non-magnetic LaH$_3$…
Skyrmions are topologically protected entities in magnetic materials which have the potential to be used in spintronics for information storage and processing. However, Skyrmions in ferromagnets have some intrinsic difficulties which must…
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller…