Related papers: Room-temperature antiferromagnetic memory resistor
Chiral magnets are materials which possess unique helical arrangements of magnetic moments, which give rise to nonreciprocal transport and fascinating physics phenomena. On the one hand, their exploration is guided by the prospects of…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
Interfaces and low dimensionality are sources of strong modifications of electronic, structural, and magnetic properties of materials. FeRh alloys are an excellent example because of the first-order phase transition taking place at…
Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables…
A novel class of antiferromagnets, dubbed altermagnets, exhibit a non-relativistically spin-split band structure reminiscent of $d$-wave superconductors, despite the absence of net magnetization. This unique characteristic enables…
On the basis of first-principles calculations we show that the M-type hexaferrite BaFe12O19 exhibits frustrated antiferroelectricity associated with its trigonal bipyramidal Fe3+ sites. The ferroelectric (FE) state of BaFe12O19, reachable…
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…
The quasi-two-dimensional van der Waals magnet Fe$_{5-\delta}$GeTe$_2$ has emerged as a promising platform for electronic and spintronic functionalities at room temperature, owing to its large ferromagnetic ordering temperature…
We report on calorimetry under applied hydrostatic pressure and magnetic field at the antiferromagnetic (AFM)-ferromagnetic (FM) transition of Fe$_{49}$Rh$_{51}$. Results demonstrate the existence of a giant barocaloric effect in this…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
The antiferromagnetically (AFM) ordered state of GdRh$_{2}$Si$_{2}$ which consists of AFM-stacked ferromagnetic layers is investigated by magnetic resonance spectroscopy. The almost isotropic Gd$^{3+}$ paramagnetic resonance becomes…
Stemming from antiferromagnetic coupling, exchange bias allows inverted hysteresis in a magnetic system. Such room temperature magnetic reversal has yet to be observed in an amorphous antiferromagnet. Furthermore, the impact of this…
Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
Bistable nanomagnets store a binary bit of information. Exchange coupled nanomagnets can increase the thermal stability at low dimensions. Here we show that the antiferromagnetically (AFM) coupled nanomagnets can be highly stable at low…
Predictions of the anisotropic magnetic susceptibility chi below the antiferromagnetic (AFM) ordering temperatures TN of local moment Heisenberg AFMs have been made previously using molecular field theory (MFT) but are very limited in their…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
Nanopatterned magnetic thin films offer a platform for exploration of tailored magnetic properties such as emergent long-range order. A prominent example is artificial spin ice (ASI), where an arrangement of nanoscale magnetic elements,…
The antiferromagnetic to ferromagnetic phase transition in B2-ordered FeRh is imaged in laterally confined nanopatterned islands using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. The resulting magnetic…