Related papers: Room-temperature antiferromagnetic memory resistor
Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its…
High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport…
Antiferromagnets (AFMs) are widely believed to be superior than ferromagnets in spintronics because of their high stability due to the vanishingly small stray field. It is thus expected that the order parameter of AFM should always align…
Recent demonstrations on manipulating antiferromagnetic (AF) order have triggered a growing interest in antiferromagnetic metal (AFM), and potential high-density spintronic applications demand further improvements in the anisotropic…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
Effect of Ge substitution on first order ferrimagnetic (FRI) - antiferromagnetic (AFM) transition in Mn$_2$Sb has been studied. It shows that transition temperature (T$_t$) can be tuned between 119~K - 271~K by substituting 2.5-10\% Ge at…
The antiferromagnetic (AFM) to ferromagnetic (FM) first order phase transition of an epitaxial FeRh thin-film has been studied with x-ray magnetic circular dichroism using photoemission electron microscopy. The FM phase is magnetized…
The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices,…
The manipulation of antiferromagnetic (AFM) order is a central theme in modern spintronics. In this work, we achieve reliable switching of the chiral AFM state in the Weyl antiferromagnet Mn$_3$Sn using a heat pulse combined with a very…
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms…
The magnetic field-pressure-temperature (H-P-T) phase diagram for first order antiferromagnetic (AFM) to ferromagnetic (FM) transition in Fe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements under simultaneous…
We predict a huge anisotropic thermal magnetoresistance (ATMR) in the near-field radiative heat transfer between magneto-optical particles when the direction of an external magnetic field is changed with respect to the heat current…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
Recently, magnetic skyrmion has emerged as an active topic of fundamental study and applications in magnetic materials research. Magnetic skyrmions are vortex-like spin excitations with topological protection and therefore are more robust…
The low-temperature antiferromagnetic state of the Sm-ions in both nonsuperconducting SmFeAsO and superconducting SmFeAsO$_{0.9}$F$_{0.1}$ single crystals was studied by magnetic torque, magnetization, and magnetoresistance measurements in…
Heat waste is a bottleneck in the development of green information technologies and much effort has been devoted to suppress the heating effect in both electronic and spintronic devices. Here we take an alternative approach and show that…
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. In spite of the electrical modulation of insulated AFMs through coupling between their intrinsic…
Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of…
Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…