Related papers: Processing and characterization of epitaxial GaAs …

Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit…

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…

GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films,…

The diffusion length of minority carriers L p,n is an important characterisation parameter in semiconductor materials and is of particular interest when constructing devices such as solar cells (Hovel 1975), double hetero junction lasers…

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi…

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces…

High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links…

We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high…

This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of…

We report on the systematic study of a single-gas-electron-multiplication (GEM) loaded gaseous detector developed for precision measurements of high-energy particle beams and dose-verification measurements. In the present study, a…

High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy…

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2…

Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for X-ray detection, because of its high conversion efficiency…

In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs nanowires on epi-ready Si substrates by Molecular Beam Epitaxy (MBE) are studied. The interaction of Ga nano-droplets (NDs) with the silica…

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…

The sensitivity of 2nd and 3rd generations of interferometric gravitational wave detectors will be limited by thermal noise of the test-mass mirrors and highly reflective coatings. Recently developed crystalline coatings show a promising…

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…

With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…

Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is destroyed is not available on a defect…