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We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx)…
We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a…
We demonstrate a technique to produce thin graphene layers on C-face of SiC under ultra high vacuum conditions. A stack of two SiC substrates comprising a half open cavity at the interface is used to partially confine the depleted Si atoms…
We investigate a well defined heterostructure constituted by magnetic Fe layers sandwiched between graphene (Gr) and Ir(111). The challenging task to avoid Fe-C solubility and Fe-Ir intermixing has been achieved with atomic controlled Fe…
We have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe…
For commercial grade electronic devices, stable structures are required to ensure a long device life span. When such devices contain nanomaterials like graphene, it is crucial that these materials resist industrial processes and harsh…
While preserving many of the unusual features of single-layer graphene, few-layer graphene (FLG) provides a richness and flexibility of electronic structure that render this set of materials of great interest for both fundamental studies…
Graphene is an intriguing material with properties that are distinct from those of other graphitic systems. The first samples of pristine graphene were obtained by peeling off and epitaxial growth. Recently, the chemical reduction of…
We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and…
Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are…
The intercalation of different species in graphene-metal interfaces is widely used to stabilise the artificial phases of different materials. However, formation of the surface alloys upon the guest-metal intercalation is still an open…
Ni(OH)2 nanocrystals grown on graphene sheets with various degrees of oxidation are investigated as electrochemical pseudocapacitor materials for potential energy storage applications. Single-crystalline Ni(OH)2 hexagonal nanoplates…
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate…
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the…
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of…
Photonic crystal slabs have been widely used in nanophotonics for light confinement, dispersion engineering, nonlinearity enhancement, and other unusual effects arising from their structural periodicity. Sub-micron device sizes and mode…
Previous experimental observations for H intercalation under graphene on SiC surfaces motivate clarification of configuration stabilities and kinetic processes related to intercalation. From first-principles density-functional-theory (DFT)…
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2…
The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find…