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Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal…

Materials Science · Physics 2024-04-04 Laura Caputo , Viet-Hung Nguyen , Jean-Christophe Charlier

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…

Mesoscale and Nanoscale Physics · Physics 2025-02-06 Gaëlle Bigeard , Zineb Kerrami , François Triozon , Alessandro Cresti

The defect-mediated hexagonal boron nitride (hBN) supercell display the visible optical spectra and electronic characteristics. The defects in the hBN supercell include the atomic vacancy, antisite, antisite vacancy, and substitution of a…

Materials Science · Physics 2019-12-13 Sheng Yu , Bagher Tabibi , Qiliang Li , Felix Jaetae Seo

The corrosion of metallic surfaces poses significant challenges across industries such as petroleum, energy, and biomedical sectors, leading to structural degradation, safety risks, and substantial maintenance costs. Traditional organic and…

Radiative defects in hexagonal boron nitride (hBN) are active in a broad spectral range from deep ultraviolet to near-infrared wavelengths. Representatives of these defects act as bright single photon sources, spin-1 systems, and…

Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating…

Mesoscale and Nanoscale Physics · Physics 2019-12-23 Marin Petrović , Michael Horn-von Hoegen , Frank-J. Meyer zu Heringdorf

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…

Instrumentation and Methods for Astrophysics · Physics 2023-08-09 M. Lisovenko , Z. Pan , P. S. Barry , T. Cecil , C. L. Chang , R. Gualtieri , J. Li , V. Novosad , G. Wang , V. Yefremenko

Wurtzite Boron Nitride ($w$BN) is a wide band gap BN polymorph with peculiar mechanical properties (hardness and stiffness). After its first synthesis in 1963 as a transformation of hexagonal BN ($h$BN) under high temperature and pressure…

Materials Science · Physics 2023-05-31 Martino Silvetti , Claudio Attaccalite , Elena Cannuccia

Hexagonal boron nitride (h-BN) is deposited on Si <100> wafer ($\approx$20 cm2) via Plasma Enhanced Chemical Vapor Deposition (PECVD) using a ns-pulsed N2/Ar Micro Hollow Cathode Discharge (MHCD) as a microplasma source. For the first time,…

This study focuses on amorphous boron nitride ($\rm \alpha$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects.…

Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees…

Mesoscale and Nanoscale Physics · Physics 2018-08-15 Patrick C. Mende , Jun Li , Randall M. Feenstra

For many 2D materials, optical and Raman spectra are richly structured, and convey information on a range of parameters including nanosheet size and defect content. By contrast, the equivalent spectra for h-BN are relatively simple, with…

Colloidal materials of tin(II) sulfide (SnS), as a layered semiconductor with a narrow band gap, are emerging as a potential alternative to the more toxic metal chalcogenides (PbS, PbSe, CdS, CdSe) for various applications such as…

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

Materials Science · Physics 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek

Periodically corrugated epitaxial graphene and hexagonal boron nitride (h-BN) on metallic substrates are considered as perspective templates for the self-assembly of nanoparticles arrays. By using first-principles calculations, we determine…

Mesoscale and Nanoscale Physics · Physics 2010-07-13 Oleg V. Yazyev , Alfredo Pasquarello

Borophene (two-dimensional boron sheet) is a new type of two-dimensional material, which was recently grown successfully on single crystal Ag substrates. In this paper, we investigate the electronic structure and bonding characteristics of…

Mesoscale and Nanoscale Physics · Physics 2016-06-23 Bo Peng , Hao Zhang , Hezhu Shao , Yuanfeng Xu , Rongjun Zhang , Heyuan Zhu

Boron nitride (BN) is a structurally versatile insulator since it can be found in several crystalline structures with interesting mechanical and electrical properties, making this material attractive for technological applications. Seeking…

Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating…

Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance…

Instrumentation and Methods for Astrophysics · Physics 2012-10-05 Giuseppe Cataldo , James A. Beall , Hsiao-Mei Cho , Brendan McAndrew , Michael D. Niemack , Edward J. Wollack

Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigatethe structural and electronic…

Materials Science · Physics 2015-06-25 Yongqing Cai , Gang Zhang , Yong-Wei Zhang
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