Related papers: Unidirectional spin Hall magnetoresistance in ferr…
We report the observation of a unidirectional magnetoresistance (UMR) that originates from the nonequilibrium orbital momentum induced by an electric current in a naturally oxidized Cu/Co bilayer. The orbital-UMR scales with the torque…
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The…
We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs…
In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a…
The control of unconventional magnetism, which displays ferromagnetism-like properties with compensated magnetization, has drawn intense attention for advancing antiferromagnetic spintronics. Here, through symmetry analysis, we propose a…
Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal…
The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity…
Magnetoresistive effects are typically symmetric under magnetization reversal. However, nonlinear spin transport can give rise to unidirectional magnetoresistance in systems with strong spin-orbit interaction and broken inversion symmetry.…
Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by…
We study current-induced switching of the N\'eel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path…
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We…
Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall…
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has…
Nanoscale bilayers containing at least one magnetic layer exhibit universal unusual anisotropic magnetoresistance (UAMR) and unidirectional magnetoresistance (UMR). They are currently understood through various mechanisms related to the…
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed…
We perform electronic measurements of unidirectional spin Hall magnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction with magneto-optical Brillouin light spectroscopy of spin current-driven magnon population. We show that the…
We study magnetotransport in conical helimagnet crystals. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal…
In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a reduction of ~2.5% for the bilayer specimen as compared to…