Related papers: Unidirectional spin Hall magnetoresistance in ferr…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in…
Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce due to often conflicting requirements of stabilizing both…
We present the Co-Gd composition dependence of the spin-Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) for ferrimagnetic Co100-xGdx / Pt bilayers. With Gd concentration x, its magnetic moment increasingly competes with…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
Spin Hall magnetoresistance (SMR) is an intriguing spin-dependent transport phenomenon in bilayers consisting of non-magnetic and magnetic layers. Here, we report on the influence of longitudinal spin current absorption by the magnetic…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
We report on the chemical structure and spin Hall magnetoresistance (SMR) in epitaxial $\alpha$-Fe$_2$O$_3$(hematite)(0001)/Pt(111) bilayers with hematite thicknesses of 6 nm and 15 nm grown by molecular beam epitaxy on a MgO(111)…
Energy-efficient fast switching of spin orientations or textures is a core issue of spintronics, which is highly demanded but remains challenging. Different from the mainstream routes based on spin-transfer torque or spin-orbit torque, here…
The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with…
We utilize spin Hall magnetoresistance (SMR) measurements to experimentally investigate the pure spin current transport and magnetic properties of nickel ferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures. We use…
We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before…
We present calculations of spin-dependent electron transport through single organic molecules bridging pairs of iron nanocontacts. We predict the magnetoresistance of these systems to switch from positive to negative with increasing applied…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect, and have so far been identified experimentally in magnetically-doped topological insulator (MTI) thin films and in bilayer graphene moir{\'e}…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…
We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the…
The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e.…