Related papers: Broadband Quantum Efficiency Enhancement in High I…
A fundamental issue that limits the efficiency of many photoelectrochemical systems is that the photon absorption length is typically much longer than the electron diffusion length. Various photon management schemes have been developed to…
We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic…
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…
We develop single-photon detectors comprising single-mode fiber-coupled superconducting nanowires, with high system detection efficiencies at a wavelength of 940 nm. The detector comprises a 6.5-nm-thick, 110-nm-wide NbN nanowire meander…
We show a large enhancement of two-photon absorption processes in nanocrystal quantum dots and of light upconversion efficiency from the IR to the near-IR spectral regime, using a hybrid optical device in which near-IR emitting InAs quantum…
We demonstrate a large light absorptance (80%) in a nanometric layer of quantum dots in rods (QRs) with a thickness of 23 nm. This behavior is explained in terms of the coherent absorption by interference of the light incident at a certain…
This work presents a new design for broadband absorption of low-frequency acoustic waves using a thin coating made of subwavelength acoustic resonators arranged periodically on a reflective surface. We first study the associated scattering…
We report on simulation results that shows optimum photon absorption by superconducting nanowires can happen at a fill-factor that is much less than 100%. We also present experimental results on high performance of our superconducting…
To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark…
Single epitaxial quantum dots (QDs) embedded in nanophotonic geometries are a leading technology for quantum light generation. However, efficiently coupling their emission into a single mode fiber or Gaussian beam often remains challenging.…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
Since thin-film silicon solar cells have limited optical absorption, we explore the effect of a nanostructured back reflector to recycle the unabsorbed light. As a back reflector we investigate a 3D photonic band gap crystal made from…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…
At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is…
Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it…
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both…
Simulations of metal nanopatterns embedded in a thin photovoltaic absorber show significantly enhanced absorbance within the semiconductor, with a more than 300% increase for {\lambda} = 800 nm. Integrating with AM1.5 solar irradiation,…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
Luminescent solar concentrator (LSC) can absorb large-area incident sunlight, then emit luminescence with high quantum efficiency, which finally be collected by a small photovoltaic (PV) system. The light-harvesting area of the PV system is…
A new type of negative electron affinity (NEA) photocathode based on GaAs nanopillar array (NPA) Mie-type resonators was demonstrated for the first time. For visible wavelengths, the Mie resonances in GaAs NPA reduced light reflectivity to…