Related papers: Valley blockade and multielectron spin-valley Kond…
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…
Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite…
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When…
The Kondo effect arises from many-body interactions between localized magnetic impurities and conduction electrons, affecting electronic properties at low temperatures. In this study, we investigate the Kondo effect within a two-dimensional…
We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit…
Progress in the fabrication of nanometer-scale electronic devices is opening new opportunities to uncover the deepest aspects of the Kondo effect, one of the paradigmatic phenomena in the physics of strongly correlated electrons. Artificial…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
We investigate Kondo effect and spin blockade observed on a many-electron quantum dot and study the magnetic field dependence. At lower fields a pronounced Kondo effect is found which is replaced by spin blockade at higher fields. In an…
We show how the charge input signal applied to the gate electrode in a double and triple quantum dot may be converted to a pulse in the Kondo cotunneling current being a spin response of a nano-device under a strong Coulomb blockade. The…
We study the Kondo effect in a single-electron transistor device realized in a single-wall carbon nanotube. The K-K' double orbital degeneracy of a nanotube, which originates from the peculiar two-dimensional band structure of graphene,…
A magnetic impurity with a larger $S=1$ spin remains partially screened by the Kondo effect when embedded in a metal. However, when placed within an $s$-wave superconductor, the interplay between the superconducting energy gap $\Delta$ and…
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these…
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…
We investigate the influence of spin-orbit coupling on the Kondo effects in carbon nanotube quantum dots, using the numerical renormalization group technique. A sufficiently large spin-orbit coupling is shown to destroy the SU(4) Kondo…
The linear response transport properties of carbon nanotube quantum dot in the strongly correlated regime are discussed. The finite-U mean field slave boson approach is used to study many-body effects. Magnetic field can rebuilt Kondo…
We investigate the effects of spin-orbit interaction (SOI) and valley mixing on the transport and dynamical properties of a carbon nanotube (CNT) quantum dot in the Kondo regime. As these perturbations break the pseudo-spin symmetry in the…
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a…
It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo…
The traditional multichannel Kondo effect takes place when several gapless metallic electronic channels interact with a localized spin-$S$ impurity, with the number of channels $n$ exceeding the size of the impurity spin, $n>2S$, leading to…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…