Related papers: Electrically Tunable Magnetism in Magnetic Topolog…
Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation…
The possibility of electron beam guiding is theoretically explored on the surface of a topological insulator through the proximity interaction with a magnetic material. The electronic band modification induced by the exchange coupling at…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
We calculate the tunneling conductance \sigma between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field B_y. The parallel magnetic produces a relative shift of the…
Two-dimensional van der Waals magnets hosting topological magnetic textures, such as skyrmions, show promise for applications in spintronics and quantum computing. Electrical control of these topological spin textures would enable novel…
We theoretically study the magnetization dynamics of a thin ferromagnetic film exchange-coupled with a surface of a strong three-dimensional topological insulator. We focus on the role of electronic zero modes imprinted by domain walls…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC),…
When a ferromagnet is deposited on the surface of a topological insulator the topologically protected surface state develops a gap and becomes a 2-dimensional quantum Hall liquid. We demonstrate that the Hall current in such a liquid,…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
The possibility of selecting magnetic space groups by orienting the magnetization direction or tuning magnetic orders offers a vast playground for engineering symmetry protected topological phases in magnetic materials. In this work, we…
How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…
Topological insulators with intrinsic magnetic order are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. To study these systems and their physics, people have proposed a…
We present an optimal field-free protocol for current-induced switching of a perpendicularly magnetized ferromagnetic insulator nanoelement on the surface of a topological insulator. The time dependence of in-plane components of the surface…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
The recent discovery of antiferromagnetic (AFM) topological insulator (TI) MnBi$_2$Te$_4$ has triggered great research efforts on exploring novel magnetic topological physics. Based on first-principles calculations, we find that the…