Tunneling Planar Hall Effect in Topological Insulators: Spin-Valves and Amplifiers
Abstract
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological insulator/ferromagnet junction can thus be drastically altered from a simple spin-valve to an amplifier.
Keywords
Cite
@article{arxiv.1601.01009,
title = {Tunneling Planar Hall Effect in Topological Insulators: Spin-Valves and Amplifiers},
author = {Benedikt Scharf and Alex Matos-Abiague and Jong E. Han and Ewelina M. Hankiewicz and Igor Žutić},
journal= {arXiv preprint arXiv:1601.01009},
year = {2016}
}
Comments
13 pages, pages 6-13 contain supplemental material