Related papers: Ferroelectricity and Rashba effect in GeTe
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent…
In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron…
By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric…
A comprehensive mapping of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous…
We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such…
The discovery of novel properties, effects or microscopic mechanisms in modern materials science is often driven by the quest for combining, into a single compound, several functionalities: not only the juxtaposition of the latter…
Recently large Rashba-like spin splitting has been observed in certain bulk ferroelectrics. In contrast with the relativistic Rashba effect, the chiral spin texture and large spin-splitting of the electronic bands depend strongly on the…
Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a…
GeTe wins the renewed research interest due to its giant bulk Rashba spin orbit coupling (SOC), and becomes the father of a new multifunctional material, i.e., ferroelectric Rashba semiconductor. In the present work, we investigate Rashba…
The Edelstein effect is a promising mechanism for generating spin and orbital polarization from charge currents in systems without inversion symmetry. In ferroelectric materials, such as Germanium Telluride (GeTe), the combination of bulk…
$\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric material, for which a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The detailed dispersions of the surface states inside the…
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…
Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, $\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) semiconductor for which a strong spin-orbit…
Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin…
The coexistence of ferroelectricity and spin-orbit coupling (SOC) in noncentrosymmetric systems may allow for a nonvolatile control of spin degrees of freedom by switching the ferroelectric polarization through the well-known ferroelectric…
Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We…
The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these…
We experimentally investigate magnetization reversal curves for a GeTe topological semimetal. In addition to the known lattice diamagnetic response, we observe narrow magnetization loop in low fields, which should not be expected for…
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba…