Related papers: Ferroelectricity and Rashba effect in GeTe
We put forward the concept of a bulk Rashba effect emerging in a multiferroic material, such as an antiferromagnetic system with a polar crystal structure. According to symmetry considerations, while time-reversal and space-inversion…
The dynamical, dielectric and elastic properties of GeTe, a ferroelectric material in its low temperature rhombohedral phase, have been investigated using first-principles density functional theory. We report the electronic energy bands,…
By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)]. We unveil an extremely rich physics strongly linked to…
We investigate spin- and orbital-to-charge conversion phenomena in nonmagnetic materials with broken inversion symmetry, treating the contributions from the Hall effect and the Rashba-Edelstein effect on an equal footing. We develop a…
Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster…
One of the most fundamental phenomena and a reminder of the electron's relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction, hardly discernible in…
Polar metals are an intriguing class of materials in which electric polarisation and metallicity can coexist within a single phase. The unique properties of polar metals challenge expectations, making way for the exploration of exotic…
One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…
Both magnetism and spin-orbit coupling in systems with broken inversion symmetry lift the spin degeneracy of electronic bands, but the consequences of interplay between these mechanisms remain poorly understood. Here, we show that ultrathin…
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using…
The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…
We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba…
In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The mis-alignment between the magnetization and the non-equilibrium spin…
Recent studies using Terahertz Time-Domain Spectroscopy (THz-TDS) with spintronic emitters as a source have revealed distinct signatures of the Rashba effect. This effect, which arises from the breaking of inversion symmetry in…
Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization. Although they are excellent candidates as…
Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The…
By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and…
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…
The Rashba parameter ${\alpha}$$_R$ is usually assumed to scale linearly with the amplitude of polar displacements by construction of the spin-orbit interaction. On the basis of first-principles simulations, ferroelectric phases of…
We present semiclassical and quantum mechanical results for the effects of a strong magnetic field in Quantum Wires in the presence of Rashba Spin Orbit coupling. Analytical and numerical results show how the perturbation acts in the…